1SS404
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS404
High Speed Switching Applications
Unit: mm
•
Two-pin small packages are suitable for higher mounting densities
•
Low forward voltage : VF (3) = 0.38 V (typ.)
•
Low reverse current: IR = 50 μA (max)
•
Small total capacitance: CT = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
700
mA
Average forward current
IO
300
mA
Power dissipation
P
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 ~ 125
°C
Operating temperature range
Topr
−40 ~ 100
°C
Maximum (peak) reverse voltage
200 (Note 1)
mW
USC
JEDEC
―
JEITA
―
Using continuously under heavy loads (e.g. the application of
TOSHIBA
1-1E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.004 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm,
pad dimension 4 mm × 4 mm.
Note:
Marking
Equivalent Circuit (top view)
S5
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
VF (1)
IF = 1 mA
⎯
0.16
⎯
VF (2)
IF = 10 mA
⎯
0.22
⎯
VF (3)
Forward voltage
Unit
V
IF = 300 mA
⎯
0.38
0.45
Reverse current
IR
VR = 20 V
⎯
⎯
50
μA
Total capacitance
CT
VR = 0, f = 1 MHz
⎯
46
⎯
pF
1
2007-11-01
