HN4B101J
TOSHIBA Transistor
Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J
MOS Gate Drive Applications
Switching Applications
Unit: mm
+0.2
2.8 -0.3
+0.2
1.6 -0.1
High-speed switching : PNP
2
tf = 45 ns (typ.)
3
+0.2
1.1 -0.1
: NPN tf = 50 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
1. Base (PNP)
Unit
PNP
2. Emitter (PNP/NPN)
NPN
3. Base (NPN)
Collector-base voltage
VCBO
−30
50
Collector-emitter voltage
VCEO
−30
30
V
Emitter-base voltage
VEBO
−7
7
V
(Note 1)
IC
−1.0
1.2
Pulse (Note 1)
ICP
−5.0
5.0
IB
−120
120
4. Collector (NPN)
V
Collector current
DC
Base current
4
+0.1
0.16 -0.06
•
VCE (sat) = 0.17 V (max)
0~0.1
: NPN
0.4±0.1
Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max)
0.95
•
5
1
0.95
High DC current gain : hFE = 200 to 500 (IC = −0.12 A)
1.9±0.2
Small footprint due to a small and thin package
•
2.9±0.2
•
5. Collector (PNP)
mA
Collector power
dissipation (t = 10 s)
Single-device
operation
PC (Note 2)
0.85
Single-device
operation
PC (Note 2)
0.55
150
−55 to 150
2-3L1A
Weight: 0.014g (typ.)
°C
Tstg
TOSHIBA
W
Tj
―
W
Collector power
dissipation (DC)
―
JEITA
A
JEDEC
°C
Junction temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13
