, Una.
J
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA907
Silicon PNP Power Transistor
DESCRIPTION
• High Power Dissipation: Pc= 150W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage:V(BR)CEo=-100V(Min.)
• Complement to Type 2SC1584
PIN 1 BASE
2. EMITTER
APPLICATIONS
• Designed for amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
3. COLLECT OR (CASE)
TO-3 package
.
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
Collector-Emitter Voltage
-100
Emitter-Base Voltage
-6
V
-15
1 -1
V
VEBO
•
V
VCEO
A
A
Ic
Collector Current-Continuous
IB
Base Current-Continuous
PC
T,
-5
A
Collector Power Dissipation
@TC=25'C
150
W
Junction Temperature
150
r
nun
DIM
A
B
C
D
E
_s_ L_
M!M
WAX
3900
25.30
36 £7
780
8.50
0.90
1 10
1.40
1.60
10.92
546
H
U.JO
K
1675
L
N L 19.40
1350
1705
Q
u
Tstg
Storage Temperature
-65-150
"C
30.00
19. $2
420
3020
V
4.30
450
4.00
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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