Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
Dimensions (Unit : mm)
2SB1189
4.0
1.5
0.4
1.0
Collector power
dissipation
−5
IC
−0.7
V
V
V
A
0.5
PC
Junction temperature
Storage temperature
W
2
2SB1238
1
Tj
1.6
°C
°C
−55 to +150
∗1 When mounted on a 40×40×0.7 mm ceramic board.
∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
2SB1238
2.5
Type
∗Denotes h
2SB1189
MPT3
QR
2SB1238
ATV
QR
−
TV2
2500
BD∗
T100
1000
1.0
0.65Max.
0.5
4.4
Packaging specifications and hFE
14.5
0.9
6.8
Package
hFE
Marking
Code
Basic ordering unit (pieces)
4.5
0.5
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
∗1
∗2
150
Tstg
1.5
−80
0.4
−80
VEBO
1.5
0.4
Unit
VCEO
2SB1189
Limits
VCBO
Emitter-base voltage
Collector current
(1)
(3)
Symbol
Parameter
Collector-base voltage
Collector-emitter voltage
0.5
(2)
3.0
Absolute maximum ratings (Ta=25C)
2.5
(1) (2) (3)
2.54 2.54
1.05
0.45
FE
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
−80
−
−
V
BVCEO
−80
−
−
V
IC=−50μA
IC=−2mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
−5
−
−
V
IE=−50μA
ICBO
−
−
−0.5
μA
VCB=−50V
IEBO
−
−
−0.5
μA
VEB=−4V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
VCE(sat)
−0.2
−
−0.4
390
V
−
IC/IB=−500mA/−50mA
hFE
−
120
fT
−
100
−
MHz
Cob
−
14
20
pF
Output capacitance
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○ 2010 ROHM Co., Ltd. All rights reserved.
Conditions
VCE/IC=−3V/−0.1A
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
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2010.07 - Rev.B