SS22 thru SS215
Taiwan Semiconductor
CREAT BY ART
FEATURES
Surface Mount Schottky Barrier Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.093 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
SS
SS
SS
SS
SS
SS
SS
SS
22
23
24
25
26
29
210
215
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
90
100
150
V
Maximum RMS voltage
VRMS
14
21
28
35
42
63
70
105
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
90
100
150
V
Maximum average forward rectified current
IF(AV)
2
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Maximum instantaneous forward voltage (Note 1)
IF= 2 A @ 25℃
IF= 2 A @ 100℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=100℃
TJ=125 ℃
VF
0.5
0.4
0.70
0.65
0.85
0.70
0.4
IR
0.1
10
5
-
-
-
5
Voltage rate of change (Rated VR)
dV/dt
10000
Typical thermal resistance
RθJL
RθJA
24
70
Operating junction temperature range
Storage temperature range
TJ
TSTG
V
0.95
0.80
- 55 to +125
V/μs
O
- 55 to +150
- 55 to +150
mA
C/W
O
C
O
C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Document Number: D1307005
Version: H13
