02DZ2.0~02DZ24
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
Constant Voltage Regulation Applications
Reference Voltage Applications
Unit: mm
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Nominal voltage tolerance about ±2.5%
(2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
−
JEITA
−
1-1E1A
TOSHIBA
Weight: 4.5mg (typ.)
*: Mounted on a glass epoxy circuit board of 20 × 20mm, pad
dimensions of 4 × 4mm.
Electrical Characteristics
(See Pages 3~5.)
1
2007-11-01
