1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
DDR2 SDRAM RDIMM
MT18HTF12872PDZ – 1GB
MT18HTF25672PDZ – 2GB
MT18HTF51272PDZ – 4GB
Features
Figure 1: 240-Pin RDIMM (MO-237 R/C G)
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512
Meg x 72)
• Supports ECC error detection and correction
• VDD = V DDQ = +1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Dual rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Module height: 30mm (1.181in)
Options
Marking
• Parity
• Operating temperature
– Commercial (0°C ≤ T A ≤ +70°C)
– Industrial (–40°C ≤ T A ≤ +85°C)1
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CL2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Notes:
P
None
T
Z
-80E
-800
-667
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Table 1: Key Timing Parameters
Data Rate (MT/s)
tRCD
tRP
tRC
(ns)
(ns)
(ns)
12.5
12.5
55
15
15
55
400
15
15
55
553
400
15
15
55
400
400
15
15
55
Speed
Grade
Industry
Nomenclature
CL = 6
CL = 5
CL = 4
CL = 3
-80E
PC2-6400
800
800
533
400
-800
PC2-6400
800
667
533
400
-667
PC2-5300
–
667
553
-53E
PC2-4200
–
–
-40E
PC2-3200
–
–
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. E 01/13 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.