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2SK2995F

製品説明
仕様・特性

2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) High forward transfer admittance Unit: mm : |Yfs| = 30 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Enhancement mode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 250 V Drain−gate voltage (RGS = 20 kΩ) VDGR 250 V Gate−source voltage VGSS ±20 V (Note 1) ID 30 A Pulse (Note 1) IDP 120 A Drain power dissipation (Tc = 25°C) PD 90 W JEDEC ― Single pulse avalanche energy (Note 2) EAS 925 mJ JEITA ― Avalanche current IAR 30 A Repetitive avalanche energy (Note 3) EAR 9 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current TOSHIBA 2-16F1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 1.39 °C / W Thermal resistance, channel to ambient Rth (ch−a) 41.6 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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