2SA1313
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1313
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
•
Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
•
High voltage: VCEO = −50 V (min)
•
Complementary to 2SC3325
•
Unit: mm
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−500
mA
JEDEC
Base current
IB
−50
mA
JEITA
SC-59
Collector power dissipation
PC
200
mW
TOSHIBA
2-3F1A
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
TO-236MOD
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
