KSP42/43
KSP42/43
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP42: 300V
KSP43: 200V
• Collector Power Dissipation: PC(max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Value
Units
: KSP42
: KSP43
300
200
V
V
: KSP42
: KSP43
VCEO
Parameter
300
200
V
V
Collector Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
6
V
500
mA
PC
TJ
Collector Power Dissipation
625
mW
Junction Temperature
150
TSTG
°C
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP42
: KSP43
Test Condition
IC=100µA, IE=0
* Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
IC=1mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
ICBO
Collector Cut-off Current
BVCEO
Min.
Max.
Units
300
200
V
V
300
200
V
V
6
V
: KSP42
: KSP43
100
100
nA
nA
: KSP42
: KSP43
IEBO
VCB=200V, IE=0
VCB=160V, IE=0
VBE=6V, IC=0
VBE=4V, IC=0
100
100
nA
nA
Emitter Cut-off Current
* DC Current Gain
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=20mA, IB=2mA
0.5
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC=20mA, IB=2mA
0.9
V
Cob
Output Capacitance
VCB=20V, IE=0
f=1MHz
3
4
pF
pF
hFE
: KSP42
: KSP43
fT
Current Gain Bandwidth Product
VCE=20V, IC=10mA
f=100MHz
25
40
40
50
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
