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TC7W66FUTE12L,F
TC7W66FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W66FU, TC7W66FK Dual Bilateral Switch The TC7W66 is a high speed CMOS Dual Bilateral Switch fabricated with silicon gate CMOS technology. It consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipation. Control input (C) is provided to control the switch. The switch turns ON while the C input is high, and the switch turns OFF while low. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC7W66FU (SM8) Features TC7W66FK • High speed: tpd = 7 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Low ON resistance: RON = 50 Ω (typ.) at VCC = 9 V • High degree of linearity: THD = 0.05% (typ.) at VCC = 5 V • Pin and function compatible with TC4W66 (US8) Marking SM8 Weight SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) US8 Part No. 7W66 Lot No. Part No. W 66 Pin Configuration (top view) OUT/IN 2 IN/OUT 2 VCC CONT 1 5 8 7 6 2 4 3 1 IN/OUT 1 CONT 2 GND OUT/IN 1 1 2012-11-01 TC7W66FU/FK Operating Ranges Characteristics Symbol Rating Unit Supply voltage VCC 2 to 12 V Control input voltage VIN 0 to VCC V Switch I/O voltage VI/O 0 to VCC V Operating temperature range Topr −40 to 85 °C 0 to 1000 Input rise and fall time (VCC = 2.0 V) 0 to 500 (VCC = 4.5 V) 0 to 400 (VCC = 6.0 V) tr, tf ns 0 to 250 (VCC = 10.0 V) Electrical Characteristics DC Electrical Characteristics Characteristics Symbol Ta = –40 to 85°C Ta = 25°C Test Condition VCC (V) ON resistance ⎯ ⎯ 3.15 ⎯ 6.3 ⎯ ⎯ 6.3 ⎯ 8.4 ⎯ ⎯ 8.4 ⎯ ⎯ ⎯ 0.5 ⎯ 0.5 ⎯ ⎯ 1.35 ⎯ 1.35 ⎯ ⎯ 2.7 ⎯ 2.7 ⎯ ⎯ 3.6 ⎯ 3.6 ⎯ 96 170 ⎯ 200 9.0 ⎯ 55 85 ⎯ 100 12.0 ⎯ 45 80 ⎯ 90 2.0 ⎯ 160 ⎯ ⎯ ⎯ 4.5 VIN = VIHC VI/O = VCC or GND II/O ≤ 1 mA 3.15 4.5 RON ⎯ 9.0 VIN = VIHC VI/O = VCC to GND II/O ≤ 1 mA 1.5 4.5 ⎯ ⎯ 12.0 VILC ⎯ 2.0 Low level 1.5 ⎯ 70 100 ⎯ 130 9.0 ⎯ 50 75 ⎯ ⎯ 45 70 ⎯ ⎯ 10 ⎯ ⎯ ⎯ 9.0 ⎯ 5 ⎯ ⎯ ⎯ 12.0 ⎯ 5 ⎯ ⎯ Ω 90 4.5 V 95 12.0 VIN = VIHC VI/O = VCC to GND II/O ≤ 1 mA Unit Max 9.0 Control input voltage Min 4.5 ⎯ Max 12.0 VIHC Typ. 2.0 High level Min ⎯ Difference of ON resistance between switches ΔRON Input/output leakage current (switch off) IOFF VOS = VCC or GND VIS = GND or VCC VIN = VILC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA Switch input leakage current (switch on output open) IIZ VOS = VCC or GND VIN = VIHC 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA Control input current IIN VIN = VCC or GND 12.0 ⎯ ⎯ ±100 ⎯ ±1000 nA 6.0 ⎯ ⎯ 1.0 ⎯ 10.0 9.0 ⎯ ⎯ 4.0 ⎯ 40.0 12.0 ⎯ ⎯ 8.0 ⎯ 80.0 Quiescent supply current ICC VIN = VCC or GND 3 Ω μA 2012-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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