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1SS379TE85L
1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications Small package : SC-59 Low forward voltage Unit: mm : VF = 1.0V (typ.) Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA IFSM 2* A Power dissipation P 150 mW Junction temperature Tj 125 °C Tstg −55 to 125 °C Maximum (peak) reverse Voltage Surge current (10ms) Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: JEDEC TO-236MOD JEITA TOSHIBA SC-59 1-3G1G Weight: 0.012g (typ.) Unit rating. Total rating = unit rating × 0.7 Start of commercial production 1994-01 1 2014-03-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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