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2SK2462-AZ

製品説明
仕様・特性

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2462 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2462 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high current switching applications. 4.5 ±0.2 10.0 ±0.3 FEATURES 3.2 ±0.2 2.7 ±0.2 • Low On-Resistance ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±15 A 13.5 MIN. 4 ±0.2 3 ±0.1 15.0 ±0.3 RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A) • Low Ciss Ciss = 790 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 12.0 ±0.2 RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A) ±60 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 2.0 0.65 ±0.1 W 150 2.5 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 W Total Power Dissipation (TA = 25 ˚C) PT2 0.7 ±0.1 ˚C Drain Current (pulse)* ID(pulse) Channel Temperature Tch Storage Temperature Tstg Single Avalanche Current** IAS 15 EAS 22.5 mJ 1. Gate 2. Drain 3. Source A Single Avalanche Energy** 2.54 * –55 to +150 ˚C 1 2 3 MP-45F(ISOLATED TO-220) PW ≤ 10 µs, Duty Cycle ≤ 1 % Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Gate Body Diode Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding rated voltage may be applied to this device. Document No. D10031EJ1V0DS00 Date Published May 1995 P Printed in Japan © 1995

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