DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
(in millimeters)
signed for high current switching applications.
4.5 ±0.2
10.0 ±0.3
FEATURES
3.2 ±0.2
2.7 ±0.2
• Low On-Resistance
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±15
A
13.5 MIN.
4 ±0.2
3 ±0.1
15.0 ±0.3
RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
12.0 ±0.2
RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)
±60
A
Total Power Dissipation (Tc = 25 ˚C) PT1
30
2.0
0.65 ±0.1
W
150
2.5 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54
W
Total Power Dissipation (TA = 25 ˚C) PT2
0.7 ±0.1
˚C
Drain Current (pulse)*
ID(pulse)
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current**
IAS
15
EAS
22.5
mJ
1. Gate
2. Drain
3. Source
A
Single Avalanche Energy**
2.54
*
–55 to +150 ˚C
1 2 3
MP-45F(ISOLATED TO-220)
PW ≤ 10 µs, Duty Cycle ≤ 1 %
Drain
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
©
1995
