1SS196
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS196
Unit: mm
Ultra High-Speed Switching Applications
Small package: SC-59
Low forward voltage: VF (3) = 0.9 V (typ.)
Fast reverse recovery time: trr = 1.6 ns (typ.)
Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Maximum (peak) reverse voltage
Surge current (10ms)
Storage temperature range
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristics
―
VF (2)
Min
Typ.
Max
IF = 1 mA
―
0.60
―
―
IF = 10 mA
―
0.72
―
VF (3)
―
IF = 100 mA
―
0.90
1.20
IR (1)
―
VR = 30 V
―
―
0.1
IR (2)
―
VR = 80 V
―
―
0.5
Total capacitance
CT
―
VR = 0, f = 1 MHz
―
0.9
3.0
pF
Reverse recovery time
trr
―
IF = 10 mA (Fig.1)
―
1.6
4.0
ns
Forward voltage
Reverse current
Test Condition
Unit
V
μA
Marking
1
2008-11-11
