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2SK2963TE12L,F

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仕様・特性

2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) • Unit: mm High forward transfer admittance: |Yfs| = 1.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) • Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V (Note 1) ID 1 Pulse (Note 1) IDP 3 PD 0.5 W (Note 2) PD 1.5 W Single pulse avalanche energy (Note 3) EAS 137 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 4) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation Drain power dissipation A JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5K1B Weight: 0.05 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on a ceramic board (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 221 mH, RG = 25 Ω, IAR = 1 A Note 4: Repetitive rating: pulse width limited by maximum junction temperature. Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Max Unit Rth (ch-a) 250 °C/W 1 2008-03-06

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