QS5U28
2.5V Drive Pch+SBD MOSFET
Datasheet
l Outline
VDSS
-20V
RDS(on)(Max.)
125mΩ
ID
±2.0A
PD
1.25W
TSMT5
l Inner circuit
l Features
1) The QS5U28 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT5
package.
2) Low on-state resistance with fast swicthing
3) Low voltage drive (2.5V drive).
4) Built-in Low V F schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
l Packaging specifications
Embossed
Tape
Packing
Reel size (mm)
l Application
Tape width (mm)
Type
Load switch, DC/ DC conversion
180
8
Basic ordering unit (pcs)
3000
Taping code
TR
Marking
U28
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20
V
Gate - Source voltage
VGSS
±12
V
ID
±2.0
A
ID, pulse*1
±8.0
A
IS
-1.0
A
IS, pulse*1
-8.0
A
PD*3
0.9
W/element
Junction temperature
Tj
150
℃
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation
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20150730 - Rev.001
