This product complies with the RoHS Directive (EU 2002/95/EC).
DRC5A14E
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA5A14E
Features
Package
Low collector-emitter saturation voltage VCE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Code
SMini3-F2-B
Name
Pin
1: Base
2: Emitter
3: Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: JH
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Symbol
Rating
Unit
VCBO
50
Internal Connection
V
VCEO
50
V
Collector current
IC
80
mA
Total power dissipation
PT
150
Tj
150
°C
Storage temperature
Tstg
–55 to +150
C
R1
mW
Junction temperature
B
°C
R2
Resistance value
E
R1
R2
10
10
kΩ
kΩ
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
Collector-emitter saturation voltage
VCE(sat)
VI(on)
VCE = 0.2 V, IC = 5 mA
Input voltage (OFF)
VI(off)
IC = 10 mA, IB = 0.5 mA
Input voltage (ON)
35
0.25
VCE = 5 V, IC = 100 µA
2.1
V
V
0.8
V
Input resistance
R1
–30%
10
+30%
kΩ
Resistance ratio
R1 / R2
0.8
1.0
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2011
Ver. BED
1
