UTC 2SA1020
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and
power switching applications.
FEATURES
1
*Low collector saturation voltage:
VCE(sat)=-0.5V(max.) (IC=-1A)
*High speed switching time: tstg=1.0µs(Typ.)
*Complement to UTC 2SC2655
TO-92NL
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
VCBO
VCEO
VEBO
Ic
PC
Tj
TSTG
-50
-50
-5
-2
0.9
150
-55 ~ +150
V
V
V
A
W
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector to emitter breakdown
voltage
DC Current Gain
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Turn-on time
Storage time
Fall time
UTC
SYMBOL
TEST CONDITIONS
ICBO
IEBO
VCB=-50V, IE=0
VEB=-5V, IC=0
Ic=-10mA, IB=0
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
Ic=-1A, IB=-0.05A
Ic=-1A, IB=-0.05A
VCE=-2V, Ic=-0.5A
VCB=-10V, IE=0, f=1MHz
UNISONIC TECHNOLOGIES
MIN
TYP
MAX
UNIT
-1.0
-1.0
µA
µA
V
-50
70
40
240
-0.5
V
-1.2
V
MHz
pF
µs
µs
µs
100
40
0.1
1.0
0.1
CO. LTD
1
QW-R211-007,A