〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
DESCRIPTION
OUTLINE DRAWING
Unit：ｍｍ
2SC5383 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
1.6
0.5
①
0.5
0.4
②
1.6
1.0
FEATURE
0.8
0.3
0.4
.
● Small collector to emitter saturation voltage.
③
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
●Excellent linearity of DC forward gain.
0.15
0.55
0.7
●Ultra super mini package for easy mounting
0～0.1
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-75A
JEDEC：-
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
TERMINAL CONNECTER
Ratings
Unit
①：BASE
VCBO
Collector to Base voltage
50
V
②：EMITTER
VCEO
Collector to Emitter voltage
50
V
③：COLLECTOR
VEBO
Emitter to Base voltage
6
V
200
mA
I
O
Collector current
Pc
Collector dissipation
150
mW
Tj
Junction temperature
＋150
℃
Tstg
Storage temperature
-55～＋150
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
C to E break down voltage
Symbol
Max
Unit
50
-
-
V
CB=50V, I E=0mA
-
-
0.1
μA
Emitter cut off current
IEBO
V
EB
=6V, I C=0mA
-
-
0.1
μA
DC forward current gain
hFE
V
CE
150
-
800
DC forward current gain
hFE
V
CE=6V, I C=0.1mA
90
-
-
BE
=∞
Typ
ICBO
=6V, I C=1mA
※
V
I C=100mA ,IB=10mA
-
-
0.3
V
fT
V
CE=6V, I E=-10mA
-
200
-
MHz
Collector output capacitance
Cob
V
CB
=6V, I E=0,f=1MHz
-
2.5
-
pF
Noise figure
NF
V
CE
=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
-
-
15
dB
Gain bandwidth product
VCE(sat)
I C=100μA ,R
Min
Collector cut off current
C to E Saturation Vlotage
V(BR)CEO
Limits
Test conditions
※） It shows hFE classification in below table.
Item
ｈＦＥ
Item
Ｅ
Ｆ
Ｇ
150～300
250～500
400～800
ISAHAYA ELECTRONICS CORPORATION
