1SS314
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS314
VHF Tuner Band Switch Applications
•
Unit: mm
Small package.
•
Small total capacitance: CT = 1.2 pF (max)
•
Low series resistance: rs = 0.5 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
100
mA
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 2 mA
⎯
⎯
0.85
V
Reverse current
IR
VR = 15 V
⎯
⎯
0.1
μA
Reverse voltage
VR
IR = 1 μA
30
⎯
⎯
V
Total capacitance
CT
VR = 6 V, f = 1 MHz
⎯
0.7
1.2
pF
Series resistance
rs
IF = 2 mA, f = 100 MHz
⎯
0.5
0.9
Ω
Marking
1
2007-11-01
