800V
52A
APT8014L2FLL
*G
POWER MOS 7
R
0.16Ω
Ω
APT8014L2FLLG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
FREDFET
TO-264
Max
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
D
G
S
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8014L2FLL(G)
UNIT
800
Volts
Drain-Source Voltage
52
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
893
Watts
Linear Derating Factor
7.14
W/°C
PD
TJ,TSTG
208
Operating and Storage Junction Temperature Range
TL
Avalanche Current
-55 to 150
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
EAR
EAS
1
Amps
52
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 26A)
TYP
MAX
UNIT
Volts
0.160
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
5-2006
Characteristic / Test Conditions
050-7104 Rev B
Symbol
