TC7S14F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7S14F,TC7S14FU
Schmitt Inverter
The TC7S14 is a high speed C2MOS Schmitt Inverter fabricated
with silicon gate C2MOS technology.
It achieves a high speed operation similar to equivalent LSTTL
while maintaining the C2MOS low power dissipation.
Pin Configuration and function are the same as the TC7SU04F
but input have 25% VCC hysteresis and with its schmitt trigger
function, the TC7S14F can be used as line receivers which will
receive slow input signal.
Input is equipped with protection circuits against static
discharge or transient excess voltage.
Output currents are 1/2 compared to TC74HC series models.
TC7S14F
TC7S14FU
Features
•
High speed: tpd = 11 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
•
High noise immunity: VH = 1.1 V at VCC = 5 V
•
Output drive capability: 5 LSTTL loads
•
•
Symmetrical output impedance: |IOH| = IOL = 2 mA (min)
Balanced propagation delays: tpLH ∼ tpHL
−
•
Wide operating voltage range: VCC (opr) = 2 to 6 V
Weight
SSOP5-P-0.95: 0.016 g (typ.)
SSOP5-P-0.65A: 0.006 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±12.5
mA
DC VCC/ground current
ICC
±25
mA
Power dissipation
PD
200
mW
Storage temperature range
Tstg
−65 to 150
°C
TL
260
°C
Lead temperature (10 s)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-09-30
