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2SB1260
2SB1260 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.390 @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.
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