This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification with high forward current transfer ratio
4.4±0.5
14.4±0.5
3.0+0.4
–0.2
0.8±0.1 R = 0.5
R = 0.5
2.54±0.3
1.0±0.1
1.4±0.1
0.4±0.1
5.08±0.5
(8.5)
(6.0)
1.3
3
1
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
VCBO
200
V
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
6
2
Unit
V
(1.5)
■ Absolute Maximum Ratings TC = 25°C
(7.6)
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2.0±0.5
0 to 0.4
4.4±0.5
1.5+0
–0.4
10.0±0.3
1.5±0.1
1.0±0.1
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• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
3.4±0.3
6.0±0.2
■ Features
8.5±0.2
Collector current
IC
Peak collector current
ICP
Base current
IB
Collector power dissipation
PC
Ta = 25°C
1
A
0.1
A
40
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
A
2.5
(6.5)
W
Note) Self-supported type package is also prepared.
1.3
Junction temperature
Tj
Storage temperature
Tstg
150
°C
−55 to +150
°C
Symbol
ce
/D
isc
on
tin
Parameter
ue
■ Electrical Characteristics TC = 25°C ± 3°C
Conditions
Min
Typ
Max
IC = 25 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = 200 V, IE = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
µA
hFE *
VCE = 4 V, IC = 0.2 A
2000
VCE(sat)
IC = 0.5 A, IB = 0.02 A
1.0
V
an
VCEO
en
Forward current transfer ratio
int
Collector-emitter saturation voltage
VCE = 4 V, IC = 0.1 A, f = 10 MHz
fT
Ma
Transition frequency
150
Unit
Collector-emitter voltage (Base open)
V
500
25
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Rank
Q
hFE
500 to 1 200
Publication date: September 2003
P
800 to 2 000
SJD00174BED
1
