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UMW1N
UMW1N Transistors Special-Purpose Transistor No. of Units Per Package2 V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.120 h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)6.0 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) Semiconductor MaterialSilicon Structure NPN/PNPNPN Package StyleSOT-25var Mounting StyleS
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