SSM3K316T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K316T
Power Management Switch Applications
High-Speed Switching Applications
•
•
1.8-V drive
Low ON-resistance:
Unit: mm
Ron = 131 mΩ (max) (@VGS = 1.8 V)
Ron = 87mΩ (max) (@VGS = 2.5 V)
Ron = 65 mΩ (max) (@VGS = 4.5 V)
Ron = 53 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
30
V
Gate–source voltage
VGSS
± 12
V
DC
ID
4.0
Pulse
IDP
8.0
PD (Note 1,2)
700
t = 10s
1250
Drain current
Drain power dissipation
A
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
―
absolute maximum ratings.
TOSHIBA
2-3S1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 10 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Note 2: The Junction temperature should not exceed 150°C during use.
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Symbol
V (BR) DSS
Min
Typ.
Max
Unit
ID = 1 mA, VGS = 0 V
Test Condition
30
⎯
⎯
V
V (BR) DSX
ID = 1 mA, VGS = –12 V
18
⎯
⎯
V
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
Gate threshold voltage
Vth
⎯
⎯
±1
μA
0.4
⎯
1.0
V
S
RDS (ON)
Input capacitance
Coss
Reverse transfer capacitance
3.8
7.7
⎯
⎯
42
53
ID = 2.0 A, VGS = 4.5 V
(Note3)
⎯
51
65
ID = 1.0 A, VGS = 2.5 V
(Note3)
⎯
64
87
(Note3)
⎯
81
131
⎯
270
⎯
⎯
56
⎯
⎯
Ciss
Output capacitance
(Note3)
(Note3)
ID = 0.5 A, VGS = 1.8 V
Drain–source ON-resistance
VDS = 3 V, ID = 2 A
ID = 3.0 A, VGS = 10V
Forward transfer admittance
⏐Yfs⏐
VGS = ± 12 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
⎯
47
Total Gate Charge
Qg
⎯
4.3
Qgs
⎯
2.8
⎯
Gate-Drain Charge
Qgd
pF
⎯
Gate-Source Charge
mΩ
Switching time
VDS = 15 V, IDS= 3.0 A
VGS = 4 V
⎯
1.5
⎯
Turn-on time
ton
VDD = 10 V, ID = 2 A,
⎯
20
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
31
⎯
⎯
– 0.9
– 1.2
nC
Drain–source forward voltage
VDSF
ID = − 4.0 A, VGS = 0 V
(Note3)
ns
V
Note3: Pulse test
1
2008-04-08
