TK7P50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(π-MOSⅦ)
TK7P50D
Switching Regulator Applications
1.08±0.2
Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
0.58MAX
6.1 ± 0.12
+0.4
−0.6
6.6 ± 0.2
5.34 ± 0.13
10.0
1.01MAX
•
•
•
•
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
1.14MAX
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
7
Pulse (t = 1 ms)
(Note 1)
IDP
28
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
105
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
2.29
+0.25
−0.12
Unit
°C
DC
Drain current
2
1
1.52
Rating
2.3 ± 0.1
Symbol
0.07 ± 0.07
Characteristics
0.76 ± 0.12
3
1.
2.
GATE
DRAIN
（HEAT SINK）
3. SOURCE
A
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.64 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
Start of commercial production
2009-12
1
2013-11-01
