Ordering number : ENN7010
MCH3406
N-Channel Silicon MOSFET
MCH3406
Ultrahigh-Speed Switching Applications
Features
•
•
Low ON-state resistance.
Ultrahigh-speed switching.
1.8V drive.
unit : mm
2167A
[MCH3406]
0.3
0.25
•
Package Dimensions
0.15
0.25
2
1
0.65
0.07
1.6
2.1
3
2.0
3
0.85
1 : Gate
2 : Source
3 : Drain
Specifications
1
SANYO : MCPH3
2
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±10
V
3
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
V
12
A
1
Mounted on a ceramic board (900mm2!0.8mm)
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
typ
Unit
max
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
20
IDSS
IGSS
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
0.4
Forward Transfer Admittance
VGS(off)
yfs
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
48
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
RDS(on)3
ID=0.5A, VGS=1.8V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
Conditions
V
1
±10
V
63
mΩ
82
mΩ
72
Marking : KF
µA
1.3
58
3.9
µA
110
mΩ
5.6
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3097 No.7010-1/4
