ECH8102
Ordering number : ENA1420A
SANYO Semiconductors
DATA SHEET
ECH8102
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
•
High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers
Features
•
•
•
•
• High current capacitance
Adoption of FBET, MBIT process
• High speed switching
Low collector-to-emitter saturation voltage
• Halogen free compliance
High allowable power dissipation
IECO is guaranteed for preventing reverse flow from the collector to the emitter
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
V
-30
V
-30
V
-6
V
IC
ICP
Collector-to-Emitter Voltage
-30
VCEO
VEBO
Collector-to-Emitter Voltage
-12
A
-24
A
Collector Dissipation
IB
PC
Junction Temperature
Tj
Storage Temperature
Tstg
-1.2
150
ECH8102-TL-H
2.9
0.25
°C
°C
Product & Package Information
Top View
0.15
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
5
Marking
GB
2.3
0 t o 0.02
Lot No.
TL
4
1
0.65
0.3
Electrical Connection
0.9
1 : Emitter
2 : Emitter
3 : Emitter
4 : Base
5 : Collector
6 : Collector
7 : Collector
8 : Collector
0.07
2.8
W
-55 to +150
unit : mm (typ)
7011A-005
0.25
A
1.6
When mounted on ceramic substrate (900mm2×0.8mm)
Package Dimensions
8
Unit
VCBO
VCES
Bot t om View
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
52312 TKIM/D0209EA TKIM TC-00002127 No. A1420-1/7