2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!External dimensions (Units : mm)
+0.5
4.0−0.3
2.5+0.2
−0.1
1.0±0.3
ROHM : MPT3
E I A J : SC-62
(2)
(3)
0.5±0.1
0.4+0.1
−0.05
0.4±0.1
1.5±0.1
(1) Gate
(2) Drain
(3) Source
Abbreviated symbol : KE
!Internal equivalent circuit
Symbol
Limits
Unit
VDSS
60
V
V
Drain-source voltage
VGSS
±20
Continuous
ID
2
IDP∗1
8
A
Continuous
IDR
2
A
Pulsed
IDRP∗1
Drain
A
Pulsed
A
°C
°C
Gate-source voltage
Reverse drain
current
0.4±0.1
1.5±0.1
3.0±0.2
!Absolute maximum ratings (Ta = 25°C)
Drain current
1.5±0.1
1.6±0.1
(1)
!Structure
Silicon N-channel
MOS FET transistor
Parameter
4.5+0.2
−0.1
0.5±0.1
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
Total power dissipation(Tc=25°C)
PD
Channel temperature
Tch
8
0.5
2∗2
150
Storage temperature
Tstg
−55∼+150
Gate
W
∗Gate
Protection
Diode
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
µA
V(BR)DSS
60
−
−
V
ID = 1mA, VGS = 0V
IDSS
−
−
10
µA
VDS = 60V, VGS = 0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS = 10V, ID = 1mA
Static drain-source on-state
resistance
RDS(on)
−
0.25
0.32
Ω
ID = 1A, VGS = 4V
RDS(on)
−
0.35
0.45
Ω
ID = 1A, VGS = 2.5V
Forward transfer admittance
Yfs∗
1.5
−
−
S
ID = 1A, VDS = 10V
Input capacitance
Ciss
−
160
−
pF
VDS = 10V
Output capacitance
Coss
−
85
−
pF
VGS = 0V
Reverse transfer capacitance
Crss
−
25
−
pF
f = 1MHz
Turn-on delay time
td(on)
−
20
−
ns
ID = 1A, VDD
tr
−
50
−
ns
VGS = 4V
td(off)
−
120
−
ns
RL = 30Ω
tf
−
70
−
ns
RG = 10Ω
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Rise time
Turn-off delay time
Fall time
∗ Pw ≤ 300µs, Duty cycle ≤ 1%
Source
Test Conditions
VGS = ±20V, VDS = 0V
30V
