1SS181
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS181
Unit: mm
Ultra High Speed Switching Application
Small package
: SC-59
Low forward voltage
: VF (3) = 0.92V (Typ.)
Fast reverse recovery time : trr = 1.6ns (Typ.)
Small total capacitance
: CT = 2.2pF (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Symbol
Rating
Unit
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
IFSM
2 (*)
A
P
150
mW
Surge current (10ms)
Power dissipation
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
JEDEC
TO-236MOD
JEITA
SC-59
1-3G1E
TOSHIBA
Weight: 0.012g (typ.)
Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 1mA
―
0.61
―
―
IF = 10mA
―
0.74
―
VF (3)
―
IF = 100mAs
―
0.92
1.20
IR (1)
―
VR = 30V
―
―
0.1
IR (2)
―
VR = 80V
―
―
0.5
Total capacitance
CT
―
VR = 0, f = 1MHz
―
2.2
4.0
pF
Reverse recovery time
trr
―
IF = 10mA (Fig.1)
―
1.6
4.0
ns
Forward voltage
Reverse current
Test Condition
Unit
V
μA
Marking
Start of commercial production
1982-06
1
2014-03-01
