RN1310,RN1311
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1310,RN1311
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2310 and RN2311
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
IC
100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Tstg
−55 to 150
―
SC-70
2-2E1A
V
Collector current
USM
JEDEC
JEITA
TOSHIBA
Weight: 6 mg (typ.)
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
Emitter cut-off current
IEBO
Characteristic
DC current gain
Min
Typ.
Max
Unit
VCB = 50V, IE = 0
―
―
100
nA
―
VEB = 5V, IC = 0
―
―
100
nA
hFE
Transition frequency
Collector output capacitance
RN1310
RN1311
―
VCE = 5V, IC = 1mA
120
―
700
―
VCE (sat)
―
IC = 5mA, IB = 0.25mA
―
0.1
0.3
V
fT
Collector-emitter saturation voltage
Input resistor
Test Condition
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Cob
―
VCB = 10V, IE = 0, f = 1MHz
―
3
6
pF
R1
―
3.29
4.7
6.11
7
10
13
―
1
kΩ
2010-05-14
