1SS424
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS424
High-Speed Switching Applications
Low forward voltage
Unit: mm
: VF (3) = 0.50 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
30
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
200
mA
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−40~100
°C
Maximum (peak) reverse voltage
Surge current (10 ms)
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Total capacitance
Equivalent Circuit (Top View)
Typ.
Max
IF = 1 mA
―
0.18
―
―
IF = 5 mA
―
0.23
―
―
IF = 200 mA
―
0.42
0.5
IR (1)
―
VR = 10 V
―
―
30
IR (2)
Reverse current
Min
VF (3)
Forward voltage
Test Condition
―
VR = 20 V
―
―
50
CT
―
VR = 0, f = 1 MHz
―
20
―
Unit
V
μA
pF
Marking
S8
1
2007-11-01
