Power Transistor (−50V, −2A)
2SB1443
Dimensions (Unit : mm)
Features
1) Low saturation voltage.
VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA.
2) Excellent DC current gain characteristics.
ATV
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
VCBO
VCEO
Parameter
−50
−50
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VEBO
−6
−2
−5
Collector current
IC
Collector power dissipation
PC
Tj
150
Tstg
−55 to +150
Emitter
(2)
Collector
(3)
V
A (DC)
A (Pulse) ∗1
∗2
W
1
Junction temperature
Storage temperature
(1) (2) (3)
(1)
Base
°C
°C
∗1 Single pulse, Pw=10ms
2
∗2 Printed circuit board 1.7mm thick, collector plating 1cm or larger.
Packaging specifications and hFE
Type
2SB1443
Package
hFE
Marking
Code
Basic ordering unit (pieces)
ATV
Q
−
TV2
2500
∗Denotes hFE
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
−50
−50
−6
IC=−50μA
IC=−1mA
IE=−50μA
ICBO
−
−
−
−
−0.1
V
V
V
Collector cutoff current
−
−
−
−
μA
VCB=−50V
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
−
−
120
−
−0.15
−
−0.1
−0.35
270
μA
V
−
VEB=−5V
IC/IB=−1A/−50mA
−
−
200
36
−
−
MHz
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current transfer ratio
Transition frequency
Output capacitance
VCE(sat)
hFE
fT
Cob
Conditions
VCE/IC=−2V/−0.5A
VCE=−2V, IE=0.5A, f=100MHz
VCB=−10V, IE=0A, f=1MHz
∗
∗
∗ Measured using pulse current
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2011.06 - Rev.B
