Power Transistor (120V, 2A)
2SD1857
Dimensions (Unit : mm)
2SD1857
2.5
1.0
0.65Max.
0.5
4.4
0.9
6.8
14.5
Features
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency. (fT = 80MHz)
4) Complements the 2SB1236.
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45
(1) Emitter
(2) Collector
(3) Base
Taping specifications
Packaging specifications and hFE
Package
hFE
2SD1857
Taping
Code
Type
TV2
Basic ordering unit (pieces)
2500
QR
hFE values are classified as follows:
Item
hFE
Q
120 to 270
R
180 to 390
Absolute maximum ratings (Ta = 25C)
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
Emitter-base voltage
VEBO
IC
120
120
5
2
V
V
V
A
Parameter
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1
∗2
ICP
∗1
3
A
PC
∗2
1
W
150
−55 to +150
°C
°C
Tj
Tstg
Single pulse Pw = 10ms
When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more.
Electrical characteristics (Ta = 25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
120
120
5
−
−
−
−
−
−
−
−
1
V
V
V
μA
IC = 50μA
IC = 1mA
−
−
−
−
1
2
μA
V
VEB = 4V
120
−
−
−
80
20
390
−
−
−
MHz
pF
BVEBO
ICBO
IEBO
VCE(sat)
Output capacitance
hFE
fT
Cob
∗ Measured using pulse current.
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c
○ 2009 ROHM Co., Ltd. All rights reserved.
1/2
Conditions
IE = 50μA
VCB = 100V
∗
IC/IB = 1A/0.1A
VCE/IC = 5V/0.1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
∗
2009.12 - Rev.E
