JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523
2SA1832
Plastic-Encapsulate Transistors
SOT-523
TRANSISTOR (PNP)
FEATURES
High voltage and high current
Excellent hFE linearity
Complementary to 2SC4738
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
PD
Total Device Dissipation
100
mW
RθJA
Thermal Resistance Junction to Ambient
125
℃/W
TJ, Tstg
Junction and Storage Temperature
-55 to +125
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
VCEO*
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
VEBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB =-5V, IC=0
-100
nA
DC current gain
hFE
VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
VCB=-10V,IE=0,f =1MHz
Cob
400
IC=-100mA,IB=-10mA
VCE=-10V,IC=-1mA
fT
120
-0.3
80
V
MHz
4
7
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Y
GR
120-240
200-400
SY
SG
A,May,2011
