TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/630
DEVICES
LEVELS
2N7389
2N7389U
JANSR(100K RAD(Si))
JANSF(300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
-100
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
ID1
-6.5
Adc
ID2
-4.1
Adc
Continuous Drain Current
TC = +25°C
Continuous Drain Current
TC = +100°C
Max. Power Dissipation
25
Ptl
Drain to Source On State Resistance
Rds(on)
Operating & Storage Temperature
Top, Tstg
(1)
W
0.3
(2)
Ω
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = -12Vdc, ID = -4.1A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions
Symbol
Min.
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
V(BR)DSS
-100
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -1.0mA
VDS ≥ VGS, ID = -1.0mA, Tj = +125°C
VDS ≥ VGS, ID = -1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
IDSS1
IDSS2
-25
-0.25
µAdc
mAdc
rDS(on)1
rDS(on)2
0.3
0.35
Ω
Ω
rDS(on)3
0.54
Ω
VSD
-3.0
Vdc
Static Drain-Source On-State Resistance
VGS = -12V, ID = -4.1A pulsed
VGS = -12V, ID = -6.5A pulsed
Tj = +125°C
VGS = -12V, ID = -4.1A pulsed
Diode Forward Voltage
VGS = 0V, ID = -6.5A pulsed
T4-LDS-0126 Rev. 1 (091145)
Max.
TO-205AF
(modified TO-39)
JANSR2N7389, JANSF2N7389
See Figure 1
Unit
Vdc
-4.0
Vdc
-5.0
18 PIN LEADLESS CHIP
CARRIER
JANSR2N7389U, JANSF2N7389U
See Figure 2
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