2SC3835
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)
sAbsolute maximum ratings (Ta=25°C)
Ratings
VCBO
200
V
VCEO
120
sElectrical Characteristics
Unit
Symbol
Application : Humidifier, DC-DC Converter, and General Purpose
Unit
V
IEBO
VEB=8V
100max
µA
8
V
V(BR)CEO
IC=50mA
120min
V
7(Pulse14)
A
hFE
VCE=4V, IC=3A
70 to 220
3
A
VCE(sat)
IC=3A, IB=0.3A
0.5max
PC
70(Tc=25°C)
W
VBE(sat)
IC=3A, IB=0.3A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
30typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
110typ
pF
V
20.0min
4.0max
2
3
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
3
10
–5
0.3
–0.6
0.5max
3.0max
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
0.5max
V CE ( sat ) – I B Characteristics (Typical)
1
0
0
1
2
3
0
0.005 0.01
4
0.05
0.1
0.5
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
DC C urrent G ain h FE
300
Typ
100
50
1
5
1 2 5 ˚C
25˚
100
Transient Thermal Resistance
200
0.5
C
–30
˚C
50
20
0.01
7
0.05
Collector Current I C (A)
0.1
0.5
1
5 7
20
0.4
0µ
si
nk
M aximu m Power Dissip ation P C (W)
at
Co lle ctor Cu rre nt I C (A)
40
he
76
–5
ite
–1
fin
Without Heatsink
Natural Cooling
In
0.5
50
ith
1
60
W
ms
–0.5
1000 2000
100
s
30
20
10
Without Heatsink
0.05
Emitter Current I E (A)
10
P c – T a Derating
0.1
–0.05 –0.1
1
70
10
10
)
0.5
Time t(ms)
10
5
Temp
1
10
20
mp)
θ j-a – t Characteristics
5
Safe Operating Area (Single Pulse)
(V C E =12V)
30
1.0 1.1
0.5
Collector Current I C (A)
f T – I E Characteristics (Typical)
0
–0.01
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
1
Base Current I B (A)
h FE – I C Characteristics (Typical)
e Te
1
Collector-Emitter Voltage V C E (V)
20
0.02
p)
2
(Case
I B =10mA
3
–30˚C
2
1
4
Tem
20 mA
5A
3
3A
40m
se
A
4
5
(Cas
60mA
(Ca
5
6
2
25˚C
mA
A
Collector Current I C (A)
100
(V C E =4V)
7
˚C
6
2.6
125
1
A
50m
θ j - a (˚ C/W)
2
A
00m
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
7
I C= 1
Collector-Emitter Saturation Voltage V C E (s a t) (V )
I C – V CE Characteristics (Typical)
1.4
E
tf
(µs)
16.7
0.65 +0.2
-0.1
5.45±0.1
B
RL
(Ω)
50
DC C urrent G ain h FE
ø3.2±0.1
5.45±0.1
VCC
(V)
2.0±0.1
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
Cut-o ff Fr equ ency f T (MH Z )
a
4.8±0.2
b
IB
Tstg
15.6±0.4
9.6
1.8
µA
5.0±0.2
100max
2.0
VCB=200V
4.0
ICBO
19.9±0.3
Ratings
VEBO
IC
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Symbol
5
10
50
120
Collector-Emitter Voltage V C E (V)
200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150