1SS370
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS370
High Voltage, High Speed Switching Applications
Low forward voltage
Unit: mm
: VF (2) = 0.9V (typ.)
Fast reverse recovery time : trr = 60ns (typ.)
Small total capacitance
: CT = 1.5pF (typ.)
Small package
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
250
V
Reverse voltage
VR
200
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
IFSM
2
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Tstg
−55∼125
°C
Maximum (peak) reverse voltage
Surge current (10ms)
Storage temperature range
JEDEC
―
JEITA
SC−70
1-2P1D
TOSHIBA
Weight: 0.006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
―
VF (2)
Characteristic
Min
Typ.
Max
IF = 10mA
―
0.72
1.0
―
IF = 100mA
―
0.90
1.2
IR (1)
―
VR = 50V
―
―
0.1
IR (2)
―
VR = 200V
―
―
1.0
Total capacitance
CT
―
VR = 0, f = 1MHz
―
1.5
3.0
pF
Reverse recovery time
trr
―
IF = 10mA, Fig.1
―
10
60
ns
Forward voltage
Reverse current
Test Condition
1
Unit
V
μA
2007-11-01
