Ordering number : ENN6579
EC3H02C
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
EC3H02C
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Features
•
•
•
•
Low noise : NF=1.0dB typ (f=1GHz).
High gain :S21e2=12dB typ (f=1GHz).
High cutoff frequency : fT=7GHz typ.
Ultraminiature (1008 size) and thin (0.6mm)
leadless package .
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
Collector-to-Emitter Voltage
VCEO
10
V
Emitter-to-Base Voltage
VEBO
2
V
Collector Current
V
70
mA
100
mW
Junction Temperature
IC
PC
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Dissipation
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Gain-Bandwitch Product
hFE
fT
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
Forward Transfer Gain
Noise Figure
S21e21
S21e22
NF
Conditions
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
Ratings
min
typ
max
Unit
1.0
100
5
µA
10
µA
180
7
0.7
GHz
1.2
0.45
9
pF
pF
12
dB
8.5
dB
1.0
1.8
dB
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2739 No.6579-1/6
