2SB1183 / 2SB1239
Transistors
Power transistor (−40V, −2A)
2SB1183 / 2SB1239
!External dimensions (Units : mm)
!Features
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
5.1
6.5
0.65
0.5
2.3
1.0
0.5
0.8Min.
C0.5
1.5
2.3
0.9
2.3
(3) (2) (1)
1.5
5.5
0.9
!Equivalent circuit
C
0.75
2SB1183
2.5
9.5
B
RBE
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
4kΩ
C : Collector
B : Base
E : Emitter
E
2SB1239
2.5
IC
Collector current
2SB1183
Collector power
dissipation
PC
2SB1239
Junction temperature
Storage temperature
Tj
Tstg
0.9
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
W
°C
°C
1.0
Limits
−40
−40
−5
−2
−3
1
10
1
150
−55~+150
Symbol
VCBO
VCER
VEBO
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
0.65Max.
0.5
(1) (2) (3)
∗1
2.54 2.54
∗2
ROHM : ATV
!Packaging specifications and hFE
2SB1183
2SB1239
CPT3
1k~200k
TL
2500
ATV
1k~
T146
2500
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCER
−40
−40
−
−
−
−
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVEBO
−5
−
−
−
1000
−
−
−
−
V
IE=−50µA
µA
µA
V
VCB=−24V
−
−
−1
−1
−1.5
20000
1000
−
11
−
−
−
pF
Parameter
DC current
transfer ratio
Output capacitance
2SB1183
2SB1239
ICBO
IEBO
VCE(sat)
hFE
Cob
−
1.05
0.45
Taping specifications
∗1 Single pulse Pw=10ms
∗2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger.
Type
Package
hFE
Code
Basic ordering unit (pieces)
14.5
!Absolute maximum ratings (Ta=25°C)
4.4
6.8
Unit
V
V
−
Conditions
IC=−50µA
IC=−1mA, RBE=10kΩ
VEB=−4V
IC/IB=−0.6A/−1.2mA
VCE/IC=−2V/−0.5A
VCB=−10V, IE=0A, f=1MHz
(1) Emitter
(2) Collector
(3) Base
