Features
• Single Voltage Operation
•
•
•
•
•
•
•
•
•
– 5V Read
– 5V Reprogramming
Fast Read Access Time - 45 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 10 µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F010/HF010 are 5-volt only in-system programmable and erasable Flash
Memories. Their 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer
access times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100 µA.
(continued)
DIP Top View
Function
Addresses
Chip Enable
Output Enable
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
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PLCC Top View
A12
A15
A16
NC
VCC
WE
NC
WE
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
4
3
2
1
32
31
30
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
CE
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A0 - A16
AT49F010
AT49HF010
Not Recommended
for New Design
Pin Configurations
Pin Name
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
Rev. 0852B–10/98
1
AT49HF/F010
DATA POLLING: The AT49F010/HF010 features DATA
polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once
the program cycle has been completed, true data is valid
on all outputs and the next cycle may begin. DATA polling
may begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA polling the
AT49F010/HF010 provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit
may begin at any time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49F010/HF010 in the following ways: (a) VCC sense—if
VCC is below 3.8V (typical), the program function is inhibited; (b) Program inhibit—holding any one of OE low, CE
high or WE high inhibits program cycles; and (c) Noise filter—Pulses of less than 15 ns (typical) on the WE or CE
inputs will not initiate a program cycle.
Command Definition (in Hex)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
Addr
2nd Bus
Cycle
Data
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
2AAA
55
5555
10
2AAA
55
5555
40
Read
1
Addr
DOUT
Chip Erase
6
5555
AA
2AAA
55
5555
80
5555
AA
Byte
Program
4
5555
AA
2AAA
55
5555
A0
Addr
DIN
Boot Block
Lockout(1)
6
5555
AA
2AAA
55
5555
80
5555
AA
Product ID
Entry
3
5555
AA
2AAA
55
5555
90
Product ID
Exit(2)
3
5555
AA
2AAA
55
5555
F0
Product ID
Exit(2)
1
XXXX
F0
Notes:
1. The 8K word boot sector has the address range 00000H to 01FFFH.
2. Either one of the Product ID exit commands can be used.
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
3
