DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3055
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
PART NUMBER
PACKAGE
2SK3055
Isolated TO-220
designed for high current switching applications.
FEATURES
• Low On-State Resistance
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A)
5
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
(Isolated TO-220)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, −10
V
ID(DC)
±30
A
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT
25
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
15
A
Single Avalanche Energy
Note2
EAS
22.5
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
5
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, TGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13094EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1997,1999
