Agilent ABA-52563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating
frequency
• 9.8 dBm output P1dB
Description
Agilent’s ABA-52563 is an
economical, easy-to-use, internally 50-ohm matched silicon
monolithic amplifier that offers
excellent gain and flat broadband
response from DC to 3.5 GHz.
Packaged in an ultraminiature
industry-standard SOT-363
package, it requires half the board
space of a SOT-143 package.
ABA-52563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a doublediffused single polysilicon
process with self-aligned submicron emitter geometry. The
process is capable of simultaneous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
• Unconditionally stable
• Single 5V supply (Id = 35 mA)
• Lead-free option available
Applications
• Amplifier for cellular, cordless,
special mobile radio, PCS, ISM,
wireless LAN, DBS, TVRO, and TV
tuner applications
Pin Connections and
Package Marking
GND 1
GND 2
2Hx
At 2 GHz, the ABA-52563 offers a
small-signal gain of 21.5 dB,
output P1dB of 9.8 dBm and
19.9 dBm output third order
intercept point. It is suitable for
use as buffer amplifiers for
wideband applications. They are
designed for low cost gain blocks
in cellular applications, DBS
tuners, LNB and other wireless
communications systems.
• 3.3 dB noise figure
Surface Mount Package
SOT-363/SC70
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is character to identify
date code.
Simplified Schematic
Vcc
RF
Output
& Vcc
RF
Input
Ground 2
Ground 3
Ground 1
