2SC5692
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC5692
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Unit: mm
•
High DC current gain: hFE = 400 to 1000 (IC = 0.3 A)
•
Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
•
High-speed switching: tf = 120 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
2.5
Pulse
ICP
4.0
IB
250
PC
625
(Note 1)
1000
Tj
150
°C
Tstg
−55 to 150
°C
Collector current
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
A
mA
JEDEC
―
JEITA
―
TOSHIBA
mW
2-3S1C
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2000-05
1
2013-11-01
