DIODE MODULE
DD(KD)60GB40/80
UL;E76102 M）
（
Power Diode Module DD60GB series are designed for various rectifier circuits.
DD60GB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
● Two
２
１
1
+
23
–
23
3M5
21
DD
３
2- 6.5
2
~
16.5
30MAX
（Applications）
Various rectifiers, Battery chargers, DC motor drives
3
13
mounting base
elements in a package for simple (single and three phase) bridge
connections
● Highly reliable glass passivated chips
● High surge current capability
26MAX
● Isolated
93.5MAX
80
２
３
１
KD
Unit：a
■Maximum Ratings
Symbol
（Tj＝25℃ unless otherwise specified）
Ratings
Item
DD60GB40
Unit
DD60GB80
VRRM
Repetitive Peak Reverse Voltage
400
800
V
VRSM
Non-Repetitive Peak Reverse Voltage
480
960
V
Symbol
Item
Conditions
Ratings
Unit
IF AV）
（
Average Forward Current
Single phase, half wave, 180°
conduction, Tc：114℃
60
A
IF (RMS)
R.M.S. Forward Current
Single phase, half wave, 180°
conduction, Tc：114℃
95
A
Surge Forward Current
1 cycle,
／
2
I2t
I2t
Value for one cycle of surge current
IFSM
Tj
Isolation Voltage
Mounting
Torque
℃
℃
2500
A.C.1minute
A2S
−40 to ＋125
Storage Temperature
VISO
A
1100/1200
6000
−40 to ＋150
Junction Temperature
Tstg
50/60HZ, peak value, non-repetitive
V
Mounting
（M6）
Recommended Value 2.5-3.9（25-40）
4.7（48）
Terminal
（M5）
Recommended Value 1.5-2.5（15-25）
2.7（28）
N･m
（㎏f･B）
170
g
Ratings
Unit
20
mA
Mass
■Electrical Characteristics
Symbol
Item
IRRM
Repetitive Peak Reverse Current, max.
at
VFM
Forward Voltage Drop, max.
Foward current 180A，Tj＝25℃，Inst. measurement
1.25
V
Junction to case
0.50
℃/W
Rth j-c） Thermal Impedance, max.
（
Conditions
VDRM,
single phase, half wave. Tj＝150℃
