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SCPG5315E-H
LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power Po = 13.0 mW • Low threshold current lth = 6 mA • Differential Efficiency ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 6.35 mm Document No. PL10531EJ03V0DS (3rd edition) Date Published July 2006 NS CP(K) The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
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