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2SK3756
2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • Unit: mm Output power: PO =32dBmW (typ) • Gain: GP = 12dB (typ) • Drain efficiency: ηD = 60% (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 7.5 V Gain-source voltage VGSS(Note 1) 3 V ID 1 A Drain current Power dissipation PD (Note 2) 3 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Note: JEDEC ⎯ JEITA SC-62 Using continuously under heavy loads (e.g. the application of TOSHIBA 2-5K1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.05 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Operating Ranges: 0~3V Note 2: Tc = 25°C (When mounted on a 0.8 mm glass epoxy PCB) Marking Part No. (or abbreviation code) W Lot No. 1 D 2 3 A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1. Gate 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 1 2007-11-01
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