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M63820KP

製品説明
仕様・特性

POWEREX MITSUBISHI SEMICONDUCTOR ARY M63820FP/KP MIN RELI . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN transistors connected to from eight high current gain driver pairs. PIN CONFIGURATION 20 NC IN1 2 19 O1 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. 1 IN2 FEATURES G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (IC(max) = 500mA) G With clamping diodes G 3V micro computer series compatible input G Wide operating temperature range (Ta = –40 to +85°C) NC 10 11 COM INPUT OUTPUT 20P2N-A(FP) Package type 20P2E-A(KP) COMMON NC : No connection CIRCUIT DIAGRAM FUNCTION The M63820FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin (pin11). All emitters of the output transistor are connected to GND (pin10). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. COM OUTPUT 1.05K INPUT 7.2K 3K GND The eight circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +50 500 –0.5 ~ +10 500 50 1.10(GP)/0.68(KP) –40 ~ +85 –55 ~ +125 Unit V mA V mA V W °C °C Sep. 2001

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