PD - 91650A
FA57SA50LC
HEXFET® Power MOSFET
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Fully Isolated Package
Easy to Use and Parallel
Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Gate Charge Device
Low Drain to Case Capacitance
Low Internal Inductance
D
VDSS = 500V
RDS(on) = 0.08Ω
G
ID = 57A
S
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
S O T -2 2 7
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
VISO
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
57
36
228
625
5.0
± 20
725
57
62.5
3.0
-55 to + 150
Units
W
W/°C
V
mJ
A
mJ
V/ns
°C
2.5
1.3
kV
N•m
A
Thermal Resistance
Parameter
RθJC
RθCS
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Typ.
Max.
Units
–––
0.05
0.20
–––
°C/W
1
2/1/99
